MOSYS' Ultra-High Reliability 1T-SRAM-R Technology Verified on SMIC 0.13-micron Logic Process
shanghai [2004-07-28] Customers benefit from Transparent Error Correction for increasing density, quality, and elimination of laser repair SUNNYVALE, Calif., and SHANGHAI, China, July 28th, 2004 ?C MoSys, Inc. (NASDAQ: MOSY), the industry’s leading provider of high density embedded memory solutions, and Semiconductor Manufacturing International Corporation (S ...