0.18μm
	1.8V/16V
	Cell size of 2.88μm2, FLOTOX type cell
	Endurance of > 500K program/erase cycles
	Triple well
	STI isolation
	Co-salicide process
	data retention capability that has passed 3 lots 150°C and 1000 hours at the IP level
	Added on Analog Devices:
	Vractor (Junction/Oxide)
	Various Cap: MIM, PiP, Stacked Cap (MiM/PiP/Oxide)
	Native Vt Device
	High resistance poly (HRP) (1000 ohm/□)
	Schottky Diode
	2 Options for Various Applications:
	EE+ROM (NOR-Type) for low cost and high performance applications
	EE+OTP for low cost and flexible ROM applications. (OTP as ROM replacement)

	0.35μm
	3.3/16V
	Twin well
	LOCOS isolation
	Titanium-salicide process
	3.3/16V and 5V/16V options
	HVNMOS, HVPMOS and native HVNMOS device options
	PiP and MiM capacitors for mixed-signal application
	Cell size of < 10μm2, FLOTOX type cell
	Endurance of >1 million program/erase cycles

Device options of HVNMOS, HVPMOS, and native HVNMOS are also available. In addition, this technology features PiP and MiM capacitors for mixed-signal applications.

Available in various memory capacities, from 256b to 64kB, SMIC's 0.18μm and 0.35μm EEPROM technology presents flexible solutions for smart card or SIM card, embedded SOC applications, and other applications.

Extensive IP for this technology is available. Please refer to the Design Services section or contact us at Design_Services@smics.com.

SMIC has been qualified by a major IDM customer for smart card manufacturability. In addition, our mask shop has been certified for Chinese ID card manufacturing.