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Mixed Signal/RF CMOS |
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Features
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Built
on logic baseline process |
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Active
devices: |
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Range
of MOSFET devices with multiple Vt options |
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Deep
N-well |
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Vertical
NPN bipolar junction transistors (BJT) |
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Passive
devices: |
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High-density
MiM capacitors (Al for 0.18¦Ìm, Cu for 0.13¦Ìm), with various
unit capacitance options |
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High-quality
(Q) factor inductors and inductor models |
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Varactors
(N+ on N-well and P+/N-well junction) |
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Resistors
(SAB & high-resistance poly) |
SMIC provides strong support for mixed signal (MS) and RF CMOS technologies at the 0.13¦Ìm, 0.18¦Ìm, 0.25¦Ìm and 0.35¦Ìm nodes.
Built on a logic platform to enable easy and efficient integration,
these technologies feature high-performance transistors and
a complete suite of passive components that have been characterized
and fine-tuned for RF applications.
Multiple V t devices are offered for the 0.18¦Ìm and 0.25¦Ìm technologies, with dual gate oxide devices available for analog designs - 3.3V (0.13¦Ìm, 0.18¦Ìm, 0.25¦Ìm) and 5V (0.18¦Ìm, 0.25¦Ìm, 0.35¦Ìm). In addition, we provide process options such as deep N-well (for noise isolation), high-resistance poly, MiM capacitors and thick metal inductors.
Extensive characterization
reports such as mismatch and RF models for designer reference
are also available.
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