Overview
45 nm
65 nm
90 nm
0.13 ¦Ìm
0.15 ¦Ìm
0.18 ¦Ìm
0.25 ¦Ìm
0.35 ¦Ìm
Mixed Signal/RF CMOS
High-Voltage Technology
Micro-Display Technology
Non-Volatile Memory








0.15¦Ìm
 
Features
Single poly, seven-metal-layer (Aluminum) process
Core device options: generic (G), high-performance (LV) or ultra-low leakage (ULL)
I/O device options: 2.5V or 3.3V

SMIC's 0.15¦Ìm process technology presents cost reduction for customers, offering a higher performance of over 25% and die-size reduction of more than 25% when compared to the same device on our 0.18¦Ìm process technology.

This technology uses seven metal layers and has a poly gate length of down to 0.11¦Ìm. Customers can choose from generic, high performance or ultra-low leakage processes, and from core voltage options of 1.2V and 1.5V, and I/Os from 2.5V to 3.3V.

0.15¦Ìm libraries are available through our library partners. For analog IP and I/O availability, please refer to the Design Services section or contact us at Design_Services@smics.com.



   Contact Us  |   Site Map  |  Legal Notice  |  »¦ICP±¸020542 ©2005 SMIC; Best viewed in IE5.5+ and screen 1024X768